layer of aluminum oxide greatly increases the capacity of the radiator and is a significant fraction of the concentrator mass (see 2.2.4.3.1). The concentrators are supported by a wire grid with the same mass per unit area as that of the silicon planar configuration. FIGURE 2.2-1, GALLIUM ATJENIDE CONCENTRATOR SYSTEM 2.2.3 Design Summary Table 2.2-1 summarizes the results from the technical discussion that follows. The overall efficiency is 9.5Z. Some other key values are 0.84 reflectivity for the mirrors, 0.8 emissivity for the radiator and 15 percent efficiency of GaAs cells operating at 200 C and with a concentration ratio
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