layer of aluminum oxide greatly increases the capacity of the radiator and is a significant fraction of the concentrator mass (see 2.2.4.3.1). The concentrators are supported by a wire grid with the same mass per unit area as that of the silicon planar configuration. FIGURE 2.2-1, GALLIUM ARSENIDE CONCENTRATOR SYSTEM 2.2.3 Design Summary Table 2.2-1 summarizes the results from the technical discussion that follows. The overall efficiency is 9.5%. Some other key values are 0.84 reflectivity for the mirrors, 0.8 emissivity for the radiator and 15 percent efficiency of GaAs cells operating at 200 C and with a concentration ratio
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