breaking down water into oxygen and hydrogen. The current rectifier, which consumes a considerable amount, of energy, is no longer needed. Two modifications of the we1ding apparatus were developed. They have a wide range of applications, f rom the installst ion of 1 arge met a1 structures to work on dental plates. (R.S.F.) Source of Abstract (Subfile): NASA STIF Keywords: *SOLAR ENERGY CONVERSION; *WELDING; *WELDINB MACHINES; DIRECT CURRENT; GIRDERS; SOLAR ENERGY Subject Classification: 7537 Mechanical Engineering (1975RF-magnetron sputtering and reactive evaporation Two fast methods preparing a-Si:H films usable for solar cell app1i cat i on. MUELLER, W. ; ISELBORN, S. ; PIRRUNG, J.; SCHROEDER, B. ; GEIGER, J. (Kaiserslautern, Universitaet, Ka i ser s1 autern , W e s t German y) IN: Photovoltaic Solar Energy Conference; Proceedings of the? Fifth International Conference, Athens, Greece, October 17-21, 1983 (ASS-11301 02-44). Dordrecht, D. Reidel Publishing Co., 1984, p. 798-802. Research supported by t he Bundesministerium fuer Forschung und T echno1og i e. 7 Ref s. Language: Eng1i sh. Country of Origin: Germany, Federal Republic of. Country of Publication: Netherlands Document Type: CONFERENCE PAPER Most documents available from AIAA Technical Library Journa1 Announcement: IA A8502 Techniques and equipment used to manufacture a-Si solar cells using magnetron-sputtering (MS) and reactive evaporation (REV) are described and cell performance is assessed. An 18-20 nm/min deposition rate was achieved using MS with a 20 cm gap between the sputterer and the cell surface. A low defect density was obtained in a narrow range of h yd rog en p art i a1 pressure. Cells with a hydrogen content. of 12 at. pct displayed high photoconductivity and low defect densities. REV films formed in ultra-high vacuum using an electron gun source were deposited at 9 nm/min. A thermal dissociator provided feedstocks of hydrogen and the doping gases. A hydrogen concen tration of 8-9 at. pct was at tai ned. Efficiencies of 2.25 and 2.0 percent have thus far been realized for MS-formed Mo/n(+)-i(Pd) Schottky type and Cr/p(+)-i-n(+)/Pd cells, respectively. A potential conversion efficiency of 4.2 percent has been projected for a-Si formed by the MS method. (M.S.K.) Source of Abstract (Subfile): AIAA/TIS Keywords: *MAGNETRON SPUTTERING; *SILANES; *SILIC0N FILMS; *S0LAR CELLS; *VAP0R DEPOSITION; ELECTRON MICROSCOPY; ENERGY CONVERSION EFFICIENCY ; HYDROGENATION; MICROSTRUCTURE; F'-I-N JUNCTIONS; SCHOTTKY DIODES; VOLTAMPERE CHARACTER: I ST ICS Subject Classification: 7544 Energy Production & Conversion (1975-)
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