method (The Fluid Floor Reactor Method) has been developed in place of the conventional Siemens method, and it has succeeded in long-term operation in the demonstration plant that attempts recycling of the by-product. Si Substrate. For current space-use solar cells, the highly purified single crystal Si wafer is applied, but for SPS solar cells SOG semicrystalline Si wafer will be able to be applied. However, the solar cell made from semicrystalline Si has generally poor radiation resistance because of its numerous crystal defects, so that additional development is necessary to improve its electrical performance. A larger cell (for example, about 10 cm square) will be used, and it is necessary to reduce the cell thickness (for example, less than 100 /zm) in order to reduce the weight and the radiation degradation of space-use solar cells. Thus it is necessary to reduce the manufacturing yield in the case of large and thin semicrystalline Si wafer with larger internal stress. Junction Forming Process, Contact Forming Process and Wiring Technique. It is necessary that the depth of P-N Junction is as shallow as 0.2 /zm uniformly in order to improve the shorter wavelength response of AMO sunlight. The shallow junction needs to stretch fine grid lines around the active area of the cell, and the screen printing method of contact formation (used for present terrestrial-use cells) should be improved to get a finer pattern. The history of advancing contact formation and the interconnection of solar cells is the reliability improvements in the solar cell and module itself. The contact of the space-use solar cell which requires excellent reliability has the composite structure of Ti/Pd/Ag by the vacuum evaporation method, in order to provide resistance against humidity during storage and testing on
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