arrays with output power of 10-15 W CW in a diffraction limited output beam can be expected on the market. Also, the efficiency of these devices is very enhanced. At present electrical to optical efficiency of 39% is reported by SDL [6]. Semiconductor diode laser arrays were first proposed for an in-orbit regeneration system five years ago [7]. Due to the results of the research of the very low temperature rise laser annealing and progress in the field of very high power diode laser arrays, an in-orbit laser regeneration system can be substantially improved. It is now proposed not only for spin-stabilized satellites but also for body-stabilized space objects. The scheme of the in-orbit laser regeneration system for body-stabilized spacecraft with flexible or semi-rigid retractable solar arrays is presented in Fig. 2. Solar arrays are irradiated during deployment from an array of diode lasers. The final beam is as wide as the solar array. In this method, scanning of the laser beam is very simple. A laser regeneration system for spin-stabilized satellites was proposed three years ago. The scheme of the modified system is presented in Fig. 3. The regeneration system can work quite independently of the power and control system of the satellite. No change is necessary in satellite construction. Conclusion Very low temperature rise laser annealing for radiation-damaged photovoltaic cells has been demonstrated for the first time by use of the GaAlAs diode laser. It has been found that low dose radiation damage can be annealed without thermal effects. Photon-induced recombination enhanced injection annealing could be the reason. Due to the very low temperature rise no laser-induced damage of the solar cells nor damage to the complete solar panel is possible. Further progress in this field is possible, e.g. still lower radiation doses could be used and/or higher laser power could be applied. A scheme for an in-orbit laser regeneration system for both body- and spin-stabilized spacecraft is proposed in this paper. The main advantages of the very low temperature rise laser annealing of radiation-damaged solar cells in orbit are the following:
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