resistance than their lower resistivity-higher efficiency counterpart. The effect of 1 MeV electron irradiation on all three cell types is shown in Fig. 4 where the relatively poor radiation resistance exhibited by low resistivity silicon cells is clearly shown [2]. The figure illustrates the superior radiation resistance of InP solar cells over both GaAs and Si, and, in effect, supplies the motivation for considering InP as a potentially important space solar cell. Another advantage of InP arises from its propensity to anneal under the influence of light [4]. Due to the relatively high cost of InP wafers, all of the cells whose efficiencies are depicted in Fig. 1 have been relatively small, with areas varying from 0.25 to 0.3 cm2.
RkJQdWJsaXNoZXIy MTU5NjU0Mg==