Space Power Volume 9 Number 1 1990

Obviously, much larger cell areas are needed for inclusion in practical spacecraft arrays. In this regard, the Nippon Mining Corporation in Toda, Japan, has produced InP cells with areas of 2 cm2 and 4 cm2, respectively [19, 20]. These latter cells were processed by closed tube diffusion [12, 19, 20] on a production basis. They are intended to power a small lunar orbiting satellite, carried piggyback on board the Japanese MUSES A satellite [21]. The satellite is scheduled for launch in 1990 [21]. The spacecraft, on which the small InP powered satellite is mounted, will perform periodic lunar swingbys. At the first swingby, the small piggyback lunar orbiter will be injected into a lunar orbit. Power for the lunar orbiter will come from 1000 InP solar cells with areas of 2 cm2. Because the moon has no magnetic field, the InP cells will not be subjected to a severe ambient radiation environment. In fact, radiation from solar flares would appear to be the major predictable cause of cell degradation. Hence, rather than serving as a severe test of InP in a space radiation environment, the mission will serve mainly to space qualify the cells. It should be mentioned that, in a production run of approximately 1300 cells, more than 1000 had efficiencies over 15%, the highest efficiency being 16.6% [20]. However, past experience could lead one to predict that higher production efficiencies would be attained using the MOCVD process [11]. The preceding cells are monolithic n on p homojunctions processed by techniques which require operating temperatures of between 600 and 700°C. On the other hand ITO/InP cells are processed at room temperature [22]. These latter cells consist of a layer of w-type indium tin oxide sputtered onto a /’-type InP substrate. Cells of this type have achieved AMO efficiencies of 17%, with no visible barrier toward achievement of higher efficiencies [23], Since we were unable to find any published data concerning their behavior under irradiation, we have irradiated several ITO/InP cells

RkJQdWJsaXNoZXIy MTU5NjU0Mg==