In. developing a model of the diode, the assumption was made that an n-type gallium-arsenide device operating at about room temperature would be used. The device characteristics to be specified are the case capacitance (CD), the load inductance (LD), the work function of the metal-semiconductor junction (Vmetal), the forward bias de resistance (RD), the zero bias junction capacity (CDJO), and the reverse breakdown voltage (VDJR). In addition, the thermal voltage (KT/Q) is included as an input and the resistance of the epitaxial layer (RHO) may be included in the data input or computed from other parameters. The stages in the calculation of the other parameters follow. A relative doping density (DOPING) is derived from the reverse breakdown voltage
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