The voltage difference (VDIFF) between the metal work function (VMETAL) and the Schottky barrier voltage (VDJO) is calculated from the doping density From other values above the thickness of the epitaxial layer at zero bias (THKEPO) and its ideal overall thickness (THKEPR) may also be calculated In the diode the resistance (RDV) also varies with voltage and can be calculated from the forward resistance (TD) and the characteristics of the epitaxial layer.
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